A silicon wafer that may be exposed to deposition and etching processes. (Image courtesy of NASA Space Research.)
Instructor(s)
Prof. Judy Hoyt
Prof. L. Rafael Reif
(Contributor)
MIT Course Number
6.774
As Taught In
Fall 2004
Level
Graduate
Course Description
Course Features
Course Description
This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).